Advanced Physical Models for Silicon Device Simulation

By: Andreas Schenk

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Hardcover | 1 February 2004

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376 Pages

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24.77 x 17.78 x 1.91

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Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys- ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam- ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.

Industry Reviews

"... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field who wants to know what can and cannot be done, and a useful source of reference for experienced users ..." Microelectronics Journal

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Paperback

Published: 21st October 2012

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List of Symbols
Simulation of Silicon Devices: An Overview	p. 1
Mobility Model for Hydrodynamic Transport Equations	p. 127
Advanced Generation-Recombination Models	p. 170
Metal-Semiconductor Contact	p. 252
Modeling Transport Across Thin Dielectric Barriers	p. 281
Summary and Outlook	p. 316
Transformation of [actual symbol not reproducible]	p. 320
Evaluation of a Double Integral	p. 323
Transmission Probability for a Parabolic Barrier	p. 326
Asymptotic Forms and Interpolation of Cylinder Functions	p. 327
Energy Limit for Gaussian Approximation	p. 328
WKB Approximation for the Range [eta] ] [eta][subscript max]	p. 329
Probability of Resonant Tunneling	p. 330
References	p. 335
Subject Index	p. 336
List of Figures	p. 348
List of Tables	p. 349
Table of Contents provided by Blackwell. All Rights Reserved.

Advanced Physical Models for Silicon Device Simulation

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Hardcover

Industry Reviews

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Other Editions and Formats

Paperback

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