Foreword | p. xi |
Acknowledgments | p. xiii |
About the Authors | p. xv |
What's on the CD-ROM? | p. xvii |
IC Fabrication Overview | p. 1 |
Introduction | p. 3 |
Integrated Circuits | p. 3 |
The Semiconductor Industry | p. 6 |
Support Technologies | p. 7 |
Crystal Growth and Wafer Preparation | p. 7 |
Contamination Control | p. 8 |
Circuit Design and Mask Making | p. 10 |
Process Diagnostics and Metrology | p. 12 |
Integrated Circuit Fabrication | p. 13 |
Layering | p. 13 |
Patterning | p. 18 |
Doping | p. 21 |
Process Control and In-line Monitoring | p. 22 |
Test and Assembly | p. 25 |
Electrical Tests | p. 25 |
Die Separation | p. 25 |
Die Attach and Wire Bonding | p. 25 |
Encapsulation | p. 26 |
Final Test | p. 26 |
Summary | p. 27 |
Support Technologies | p. 29 |
Introduction | p. 31 |
Contamination Control | p. 33 |
Why Control Contamination? | p. 33 |
Contamination Sources | p. 35 |
The Cleanroom | p. 36 |
Crystal Growth and Wafer Preparation | p. 41 |
Introduction | p. 41 |
Silicon Purification | p. 42 |
Czochralski Silicon Growth | p. 43 |
Shaping, Grinding, Cutting and Polishing | p. 46 |
Final Inspection and Shipping | p. 47 |
Circuit Design | p. 49 |
Introduction | p. 49 |
Product Definition and New Product Plan | p. 50 |
The Design Team | p. 53 |
The Design Process | p. 55 |
Design Verification and Tapeout | p. 57 |
Photomask and Reticle Preparation | p. 59 |
Introduction | p. 59 |
Reticle Substrate Preparation | p. 59 |
Pattern Transfer | p. 60 |
Inspection and Defect Repair | p. 61 |
Forming Wells | p. 63 |
Introduction | p. 65 |
Initial Oxidation | p. 71 |
Photolithography | p. 79 |
Introduction | p. 79 |
Coat (Spin) | p. 82 |
Exposure (Step) | p. 83 |
Develop | p. 84 |
After Develop Inspect (ADI) | p. 85 |
Ion Implantation | p. 87 |
Isolate Active Areas (Shallow Trench Isolation) | p. 93 |
Introduction to Shallow Trench Isolation | p. 95 |
Pad Oxide Growth | p. 99 |
Silicon Nitride Deposition | p. 101 |
Photolithography for Photo/Etch | p. 105 |
Hard Mask Formation Using Plasma Etch | p. 107 |
Hard Mask Overview | p. 107 |
Plasma Etch Overview | p. 109 |
Etch Chemistry: Silicon Dioxide and Silicon Nitride | p. 114 |
Form Trenches in Silicon with Plasma Etch | p. 119 |
Fill Trenches with Silicon Dioxide | p. 121 |
Chemical Mechanical Polishing (CMP) to Remove Excess Dioxide | p. 123 |
Wet Etch Removal of Silicon Nitride and Pad Oxide | p. 127 |
Building the Transistors | p. 129 |
Introduction | p. 131 |
Thin Film Formation | p. 137 |
Gate Dielectric Oxidation | p. 137 |
Polycrystalline Silicon (Poly) Deposition | p. 140 |
Nitride Cap Deposition | p. 142 |
Poly Gate Formation | p. 143 |
Photoresist Patterning | p. 143 |
Plasma Etch | p. 144 |
Source/Drain Formation | p. 147 |
Introduction | p. 147 |
Shallow Implant | p. 149 |
Spacer Formation | p. 149 |
High-Dose Implant | p. 151 |
Anneal | p. 151 |
Salicide Formation | p. 153 |
Sputter Cobalt | p. 155 |
RTP Reaction Forming Silicide | p. 155 |
Strip Residual Cobalt | p. 156 |
Anneal the Silicide | p. 156 |
First Level Metallization | p. 157 |
Introduction | p. 159 |
Nitride and Oxide Depositions | p. 163 |
Nitride Deposition | p. 163 |
Oxide Deposition | p. 164 |
CMP Planarization | p. 167 |
Photo/Etch for Contact Holes | p. 169 |
Contact Hole Photolithography | p. 169 |
Contact Etch | p. 170 |
Tungsten Plug Process | p. 173 |
Deposit Ti/TiN Barrier/Glue Layers | p. 173 |
Tungsten CVD | p. 174 |
Tungsten CMP | p. 176 |
Low-k Dielectric Process | p. 177 |
Deposit Low-k Dielectric Film | p. 177 |
Trench Photolithography and Etch | p. 180 |
Copper First Level Interconnection Process | p. 183 |
Ta/TaN Barrier Layer Deposition | p. 183 |
Sputter Copper (Cu) | p. 185 |
Electroplate Copper (Cu) | p. 185 |
Copper CMP | p. 186 |
Multilevel Metal Interconnects and Dual Damascene | p. 189 |
Introduction | p. 191 |
Deposit Barrier Layer and Intermetal Dielectric | p. 195 |
Dual Damascene Process | p. 197 |
Introduction | p. 197 |
Via Photo/Etch | p. 198 |
Trench Photo/Etch | p. 199 |
Deposit Barrier Layers | p. 200 |
Sputter Copper | p. 200 |
Electroplate Copper | p. 200 |
CMP to Remove Excess Copper | p. 201 |
Deposit SiC Barrier Layer | p. 202 |
Build Additional Layers | p. 202 |
Form Bonding Pads | p. 203 |
Final Passivation Process | p. 205 |
Deposit Final Passivation | p. 205 |
Photo/Etch for Bonding Pads | p. 205 |
Test and Assembly | p. 207 |
Introduction | p. 209 |
Wafer and Chip Testing | p. 211 |
In-line Parametric Test | p. 211 |
Wafer Sort (Probe) | p. 212 |
Final Functional Test | p. 213 |
Assembly and Packaging | p. 215 |
Die Separation | p. 215 |
Die Attach and Bond Pad Connection | p. 216 |
Encapsulation | p. 218 |
Science Overview | p. 219 |
Introduction | p. 221 |
Atoms and Molecules | p. 223 |
The Atom | p. 223 |
Molecules | p. 226 |
Organic Molecules | p. 227 |
Gases | p. 229 |
Facts about Gases | p. 229 |
Ions | p. 230 |
Plasma | p. 230 |
Free Radicals | p. 231 |
Excited States | p. 231 |
Chemistry | p. 233 |
Introduction | p. 233 |
Thin Film Deposition Chemistry | p. 233 |
Plasma Etch Chemistry | p. 235 |
Solids | p. 237 |
Conductors and Insulators | p. 237 |
Semiconductors | p. 238 |
pn Junctions | p. 239 |
Electricity, Electric and Magnetic Fields | p. 241 |
Electric Charges and Fields | p. 241 |
Electric Current | p. 242 |
Magnetic Field | p. 243 |
Plasma Etch Supplement to Chapter 4 | p. 245 |
Plasma Etcher Theory | p. 247 |
Plasma Etch Process Requirements | p. 249 |
Bibliography | p. 251 |
Index | p. 253 |
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