| Basic Concepts | |
| Introduction | p. 3 |
| Epitaxial Crystallization Process | p. 3 |
| Growth Modes in Epitaxy | p. 6 |
| Homo- and Heteroepitaxial Crystallization Phenomena | p. 11 |
| Nucleation and Epitaxy | p. 11 |
| Defects in Epitaxial Layers | p. 15 |
| Point Defects | p. 16 |
| Dislocations | p. 16 |
| Stacking Faults | p. 18 |
| Twins | p. 19 |
| Antiphase Domain Boundaries | p. 21 |
| "Superdislocations" | p. 22 |
| Misfit Dislocations | p. 23 |
| Peculiarities of Epitaxially Grown Layers | p. 25 |
| Homoepitaxial Layers | p. 25 |
| Heteroepitaxial Layers | p. 28 |
| Application Areas of Epitaxially Grown Layer Structures | p. 35 |
| Low-Dimensional Heterostructures | p. 35 |
| Device Structures with Epitaxial Layers | p. 37 |
| Technical Implementation | |
| Solid Phase Epitaxy | p. 45 |
| Technological Procedures | p. 46 |
| Formation of the Amorphous Phase | p. 48 |
| Programmed Heating of the a/c System | p. 51 |
| Measurement of the Growth Rate | p. 52 |
| Application Areas | p. 54 |
| Growth of Highly Doped Epilayers | p. 54 |
| Growth of Buffer Layers | p. 58 |
| Liquid Phase Epitaxy | p. 63 |
| Standard Techniques | p. 64 |
| Transport Processes | p. 66 |
| Two-Dimensional Effects | p. 68 |
| LPE of Compound Semiconductors | p. 69 |
| Liquid Phase Electroepitaxy | p. 73 |
| The LPEE Process and Related Phenomena | p. 74 |
| Growth Kinetics in LPEE of GaAs | p. 76 |
| The Peltier Effect at the GaAs-substrate/(Ga-As)-Solution Interface | p. 77 |
| Vapor Phase Epitaxy | p. 81 |
| Physical Vapor Deposition | p. 84 |
| Evaporation Rates | p. 84 |
| Langmuir and Knudsen Modes of Evaporation | p. 85 |
| Principles of MBE | p. 87 |
| Sputtering | p. 88 |
| Film Deposition in a Glow Discharge | p. 89 |
| Sputtering and Epitaxy | p. 93 |
| Pulsed Laser Deposition | p. 97 |
| Chemical Vapor Deposition | p. 102 |
| Principles of CVD Processes | p. 102 |
| Mass Transport and Heat Transfer in CVD Reactors | p. 109 |
| Principles of the MOVPE Process | p. 120 |
| Atomic Layer Epitaxy | p. 121 |
| Principles of the ALE Process | p. 121 |
| Growth Systems for CVD-like ALE | p. 126 |
| Specific Features and Application Areas | p. 127 |
| Molecular Beam Epitaxy | p. 131 |
| Solid Source MBE | p. 133 |
| Basic Phenomena | p. 135 |
| Evaporation Sources | p. 140 |
| Gas Source MBE | p. 146 |
| Beam Sources Used in GSMBE | p. 147 |
| Metal Organic MBE | p. 150 |
| Hydride Source MBE | p. 152 |
| Growth Techniques Using Modulated Beams | p. 155 |
| Ultrahigh Vacuum Atomic Layer Epitaxy | p. 156 |
| Migration Enhanced Epitaxy | p. 159 |
| Molecular Layer Epitaxy | p. 161 |
| Externally Assisted MBE | p. 164 |
| Irradiation with UV Light in MLE of GaAs | p. 164 |
| Ion-Assisted Doping in Si-MBE | p. 165 |
| Plasma-Assisted MBE Growth of GaN and Related Compounds | p. 169 |
| Metal Organic Vapor Phase Epitaxy | p. 171 |
| Basic Concepts | p. 171 |
| Growth Equipment | p. 176 |
| Commercial MOVPE Reactors | p. 176 |
| Gas-Vapor Delivery Systems in MOVPE | p. 181 |
| Precursor Materials | p. 185 |
| Precursor Decomposition and Reactions | p. 190 |
| Control of Surfaces Before and During Growth | p. 194 |
| Nonthermal MOVPE Techniques | p. 196 |
| Photo-MOVPE | p. 197 |
| Plasma-MOVPE | p. 198 |
| Safety Aspects of MOVPE | p. 198 |
| In-situ Analysis of the Growth Processes | |
| In-situ Analysis of Species and Transport | p. 203 |
| Identification of the Growth Relevant Species | p. 203 |
| Mass Spectrometry | p. 204 |
| Optical Identification of Species | p. 208 |
| Mass Transport to the Surface | p. 216 |
| Measurement of Velocities | p. 217 |
| Measurement of Temperature | p. 220 |
| In-situ Surface Analysis | p. 225 |
| Scanning Microscopes | p. 226 |
| Diffractions Techniques | p. 228 |
| Diffraction | p. 229 |
| RHEED | p. 231 |
| GIXS | p. 232 |
| Reflectance Based Optical Techniques | p. 234 |
| Reflectance of Polarized Light | p. 236 |
| Reflectance Anisotropy Spectroscopy (RAS) | p. 240 |
| Ellipsometry | p. 247 |
| P-polarized Reflectance Spectroscopy (PRS) Surface Photoabsorption (SPA) | p. 253 |
| Reflectometry | p. 255 |
| Other Optical Techniques | p. 256 |
| Laser Light Scattering (LLS) | p. 256 |
| Second Harmonic Generation (SHG) | p. 258 |
| Raman Spectroscopy | p. 259 |
| Infrared Reflection Absorption Spectroscopy (IRRAS) | p. 263 |
| Physics of Epitaxy | |
| Thermodynamic Aspects | p. 267 |
| The Driving Force for Epitaxy | p. 268 |
| Basic Concepts and Terminology of Thermodynamics | p. 268 |
| The Interphase Exchange Processes | p. 270 |
| Mass Transport Phenomena | p. 271 |
| Basic Equations Describing Mass Transport in VPE Systems | p. 271 |
| The Boundary Layer at the Substrate Surface | p. 273 |
| Effusion from Solid Sources in MBE | p. 276 |
| Phase Equilibria and Phase Transitions | p. 284 |
| Ideal and Regular Solutions | p. 284 |
| The Liquid-Solid Phase Diagram | p. 288 |
| Phase Transitions in Epitaxy | p. 292 |
| Interface Formation in Epitaxy | p. 296 |
| The Interface Energy | p. 296 |
| Initial Stages of Epitaxial Growth | p. 299 |
| Self-Organization Processes | p. 302 |
| Strain-Induced Self-Ordering; Quantum Dots | p. 304 |
| Strain-Induced Lateral Ordering; Quantum Wires | p. 311 |
| Morphological Stability in Epitaxy | p. 316 |
| The Mullins-Sekerka Theory | p. 316 |
| Morphological Stability in LPE | p. 318 |
| Atomistic Aspects | p. 321 |
| Incorporating of Adatoms into a Crystal Lattice | p. 321 |
| Kossel's Model of Crystallization | p. 321 |
| Lattice Gas Models | p. 324 |
| Stochastic Model of Epitaxy | p. 327 |
| Adsorption-Desorption Kinetics | p. 332 |
| Adsorption Isotherms; Phenomenological Treatment | p. 332 |
| Adsorption Isotherms; Statistical Treatment | p. 334 |
| Thermal Desorption Kinetics | p. 337 |
| Step Advancement and Bunching Processes | p. 344 |
| Growth Conditions on Vicinal Surfaces | p. 344 |
| Step Advancement Kinetics | p. 345 |
| Mass Transport Between Steps; Step Bunching | p. 348 |
| Quantum Mechanical Aspects | p. 351 |
| Framework of Quantum Mechanics | p. 351 |
| Interatomic Bonds in Small Molecules | p. 355 |
| Chemical Bonds in Solid Crystals | p. 358 |
| Bonding at Surfaces | p. 360 |
| Surface Structure | p. 365 |
| Physical Principles | p. 365 |
| Reconstructed Surfaces; Theoretical Methodology | p. 368 |
| Reconstructed Surfaces; Materials-Related Examples | p. 372 |
| Substrate Surface Structure and the Epitaxial Growth Processes | p. 378 |
| GaAs(001) Homoepitaxy | p. 378 |
| Quantum Dots Grown on Surfaces of Different Reconstruction | p. 380 |
| Ordering in InGaP | p. 385 |
| Heteroepitaxy | |
| Heteroepitaxy; Growth Phenomena | p. 389 |
| Nearly Lattice-Matched Heterostructures | p. 389 |
| Critical Thickness; Theoretical Treatment | p. 391 |
| Critical Thickness; Experimental Data | p. 394 |
| Epitaxy on Compliant Substrates | p. 396 |
| Highly Strained Heterostructures | p. 401 |
| Surfactant-Mediated Heteroepitaxy | p. 402 |
| Heteroepitaxial Lateral Overgrowth | p. 405 |
| Hard Heteroepitaxy | p. 413 |
| Artificial Epitaxy (Graphoepitaxy) | p. 415 |
| General Principles of Graphoepitaxy | p. 416 |
| Growth Mechanisms in Graphoepitaxy | p. 418 |
| Material-Related Problems of Heteroepitaxy | p. 423 |
| Material Systems Crystallizing by the Fundamental Growth Modes | p. 423 |
| Growth by the Island Mode | p. 424 |
| Growth by the Layer-by-Layer Mode | p. 425 |
| Growth by the Layer-Plus-Island Mode | p. 426 |
| Peculiarities of Heteroepitaxy of Selected Material Groups | p. 429 |
| Group III Nitrides | p. 430 |
| IV-VI Compound Semiconductors | p. 438 |
| Organic Semiconductors | p. 452 |
| Closing Remarks | p. 465 |
| References | p. 467 |
| List of Abbreviations | p. 500 |
| List of Metalorganic Precursors | p. 505 |
| Index | p. 507 |
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