Fundamentals of III-V Devices : HBTs, MESFETs, and HFETs/HEMTs - William Liu

Fundamentals of III-V Devices

HBTs, MESFETs, and HFETs/HEMTs

By: William Liu

Hardcover | 24 March 1999 | Edition Number 1

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A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:<br> * An introductory chapter on the basic properties, growth process, and device physics of III-V materials<br> * Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design<br> * A discussion of transistor fabrication and device comparison<br> * 55 worked-out examples illustrating design considerations for a given application<br> * 215 figures and end-of-chapter practice problems<br> * Appendices listing parameters for various materials and transistor types

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