Germanium Silicon

Physics and Materials: Volume 56

By: R. K. Willardson (Editor), Eicke R. Weber (Editor), John C. Bean (Volume Editor)

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Hardcover | 2 November 1998

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

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Growth Techniques and Procedures
Misfit Strain Accommodation in SiGe Heterostructures
Fundamental Physics of Strained Layer GeSi: Quo Vadis?
Optical Properties
Electronic Properties and Deep Levels in Germanium-Silicon
Optical Applications
Si1-yCy and Si1-x-yGexCy Alloy Layers
Subject Index
Table of Contents provided by Publisher. All Rights Reserved.

Germanium Silicon

Physics and Materials: Volume 56

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