Gettering Defects in Semiconductors

Cover Title Page Preface Table of Contents List of abbreviations Names and abbreviations of publishing houses and periodicals Introduction 1. Basic technological processes and defect formation in the components of device structures 1.1. General 1.2. General information on the technology of growing crystals and their mechanical treatment 1.3. Technological processes of dielectric film deposition and semiconductor oxidation 1.4. Diffusive processes in semiconductors 1.5. Ion??implanted defects 1.6. Epitaxial layer constructing technology 1.7. Lithographic processes 1.8. Technological processes of etching 1.9. Technological processes of metallization 2. The effects of defects on electrophysical and functional parameters of semiconducting structures and devices 2.1. General 2.2. Point defects, aggregates and microdefects 2.3. Dislocations and stacking faults 2.4. Defects in the device layersof the silicon-on-dielectric (SOD) structures 3. Techniques for high??temperature gettering 3.1. Gettering by structurally??damaged layers 3.2. Gettering by heterophase layers 3.3. Thermal treatments in gettering ambients 3.4. Internal getter 3.5. Comparative analysis of gettering technique efficiency 3.6. Mechanisms and models of gettering processes 4. Physical foundations for low??temperature gettering techniques 4.1. Gettering effects during an abrasive and chemical treatment of crystal surfaces 4.2. Structural changes in hydrostatically??compressed semiconductors 4.3. Structural changes in microdefects and properties of silicon and silicon??based ultrasonically??irradiated structures 4.4. Irradiation??stimulated gettering Conclusion References Subject index.