Booktopia has been placed into Voluntary Administration. Orders have been temporarily suspended, whilst the process for the recapitalisation of Booktopia and/or sale of its business is completed, following which services may be re-established. All enquiries from creditors, including customers with outstanding gift cards and orders and placed prior to 3 July 2024, please visit https://www.mcgrathnicol.com/creditors/booktopia-group/

Guidelines for the Determination of Standardized Semiconductor Radiation Hardness Parameters

By: IAEA

Write A Review

eBook | 28 March 2023

At a Glance

Format
ePUB

eBook

RRP $56.89

$45.99

19%OFF

or 4 interest-free payments of $11.50 with

Instant Digital Delivery to your Booktopia Reader App

The operational useful lifetime of semiconductor electronic devices working in harsh radiation environments is limited by the structural defects induced by the exposure to ionizing radiation. This has immediate consequences for their use in high radiation environments, for example in nuclear facilities, satellites, radiotherapy, medical diagnostics, security and other industries. This publication establishes a standardized procedure to quantify the radiation hardness of semiconductor diode materials in a way that is independent of the irradiation parameters and biasing conditions of the device. The established parameter reflects the additional free charge carrier trapping cross section induced by the damaging radiation, normalized to the predicted concentration of generated vacancies by the same radiation. The effectiveness of the approach is validated through different types of ion beam irradiations, characterizations and materials used. The work leads towards approaches to predict the radiation induced effects on device performance for more complex electronic structures.