Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors

By: J.Michael Golio (Editor)

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Hardcover | 1 February 1991

At a Glance

Hardcover
368 Pages

Dimensions(cm)
24.13 x 16.51 x 2.54

Hardcover

$399.90

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This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed. This book is designed for microwave device and circuit design engineers, GaAs device and MMIC design engineers, MMIC and Hybrid circuit design engineers, and researchers in large signal device modelling.

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You Can Find This Book In

Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Microwave Technology Electronic Devices & Materials Computing & I.T.Graphical & Digital Media Applications Computer-Aided Design CAD Technology in General

Preface	p. ix
Basic Operation	p. 1
Materials Properties	p. 2
Energy Bands	p. 2
Doping and Carrier Concentration	p. 3
Carrier Transport and Conductivity	p. 6
Deep Levels	p. 13
Breakdown and Tunneling	p. 15
Contact Properties	p. 17
Ohmic Contacts	p. 17
The p-n Junctions	p. 19
Schottky Barrier Junctions	p. 23
Heterostructures	p. 24
MESFET Description	p. 27
Current-Voltage Characteristics	p. 30
Transconductance and Output Resistance	p. 34
Capacitance-Voltage Characteristics	p. 39
Second-Order Effects	p. 44
Output Resistance as a Function of Frequency	p. 45
Transconductance as a Function of Frequency	p. 49
Subthreshold Effects	p. 50
Optical Effects	p. 53
HEMT Description	p. 58
Current-Voltage Characteristics	p. 61
Transconductance and Output Resistance	p. 64
Capacitance-Voltage Characteristics	p. 68
Device Models	p. 73
Small-Signal Models	p. 75
Physical Significance of Equivalent Circuit Element Values	p. 75
Parasitic Inductances L[subscript s], L[subscript d], and L[subscript g]	p. 77
Parasitic Resistances R[subscript s], R[subscript d], and R[subscript g]	p. 77
Capacitances C[subscript gs], C[subscript gd], and C[subscript ds]	p. 77
Transconductance g[subscript m]	p. 78
Output Conductance g[subscript ds]	p. 78
Transconductance Delay	p. 78
Charging Resistance	p. 79
Scaling Rules for Element Values	p. 79
Physically Based Modeling	p. 80
Direct Current Analysis	p. 84
Transconductance and Output Conductance	p. 87
Capacitances C[subscript gs], C[subscript gd], and C[subscript ds]	p. 88
Pucel Model Results	p. 89
Modeling Frequency-Dependent Conductances	p. 90
Noise Models	p. 92
Empirical Noise Models	p. 97
Physical Models	p. 118
Large-Signal Models	p. 128
Empirical MESFET/HEMT Models	p. 128
Curtice Model	p. 130
Statz (Raytheon) Model	p. 133
Materka-Kacprzak Model	p. 138
TriQuint's Own Model (TOM)	p. 139
Advanced Curtice Model (Meta-Software)	p. 140
Curtice-Ettenberg Model	p. 141
Procedure for Developing HEMT Models	p. 142
HEMT Model (Curtice)	p. 143
HEMT Materka-Kacprzak Model	p. 146
HEMT Advanced Curtice Model	p. 147
MESFET/HEMT Model Comparisons	p. 147
Physically Based Models	p. 152
Physically Based MESFET Model	p. 152
Physically Based HEMT Model	p. 162
Characterization	p. 173
Direct Current Measurements	p. 174
Conventional Current-Voltage Measurements	p. 174
Forward-Bias Gate Measurements	p. 179
Radio-Frequency Measurements	p. 183
Microwave S-Parameter Measurements	p. 183
Pulsed Measurements	p. 186
Low Frequency Dispersion Measurements	p. 188
Large-Signal Measurements	p. 189
Load-Pull Measurements	p. 189
Two-Tone Harmonic Content Measurements	p. 194
Noise Characterization	p. 197
Spectral Density Measurements	p. 197
Fully Automated Minimum Noise Figure Measurements	p. 200
Parameter Extraction	p. 207
Direct Current Data Extraction	p. 207
Current-Voltage Behavior	p. 208
Parasitic Resistances	p. 211
Rectifying Contact Properties	p. 214
Gate-Drain Breakdown	p. 215
Extraction of Small-Signal Equivalent Circuits	p. 216
Conventional Optimization Techniques	p. 216
Direct Extraction of Intrinsic Elements	p. 219
Capacitance Extraction	p. 221
Extraction of g[subscript ds] and g[subscript m]	p. 222
Extraction of [tau] and R[subscript i]	p. 223
Comparison of Measured and Modeled S-Parameter Data	p. 227
Parasitic Inductance Extraction	p. 229
Extraction of Parasitic Resistances from S-Parameters	p. 232
Element Extraction at Multiple Bias Points	p. 236
Large-Signal Extraction	p. 240
Nonlinear Unconstrained Optimization	p. 240
Fundamentals of Unconstrained Optimization	p. 241
Newton Methods	p. 246
Random Optimization Techniques	p. 249
A Large-Signal Parameter Extraction Methodology	p. 252
Noise Model Extraction	p. 273
Direct Minimum Noise Figure Measurements	p. 273
Equivalent Circuit Elements with Noise Spectral Density	p. 275
Applications and Limitations	p. 279
Applications	p. 280
Low Noise and Small-Signal Amplifiers	p. 280
Power Amplifiers	p. 283
Oscillators	p. 285
Mixers	p. 288
Attenuators	p. 291
Figures of Merit	p. 294
Gain-Bandwidth Product	p. 295
Maximum Frequency of Oscillation	p. 298
Maximum Stable Gain	p. 301
Maximum Gain Efficiency	p. 303
Minimum Noise Figure and Associated Gain	p. 304
MESFET Limitations	p. 304
MESFET Scaling Rules and Physical Limits	p. 305
Transconductance and Gate-Source Capacitance	p. 314
Maximum Frequency of Oscillation and Gain-Bandwidth Product	p. 316
Noise Figure Limits	p. 319
Output Power Limits	p. 320
HEMT Limitations	p. 326
HEMT Scaling Rules and Physical Limits	p. 326
Transconductance and Gate-Source Capacitance	p. 330
Maximum Frequency of Oscillation and Gain-Bandwidth Product	p. 331
Noise Figure Limits	p. 332
Output Power Limits	p. 334
List of Symbols	p. 343
Index	p. 347
The Authors	p. 351
Table of Contents provided by Syndetics. All Rights Reserved.

Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors

At a Glance

Hardcover

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