mm-Wave Silicon Technology

Cover -- TOC -- Contents -- CH. 1. Introduction to mm-Wave Silicon Devices, Circuits, and Systems -- 1.1 Introduction -- 1.2 Whymm-Waves? -- 1.3 The Birth of Silicon mm-Wave -- 1.3.1 Why CMOS? -- 1.3.2 True Cost of Silicon mm-Wave -- 1.4 Communication in the 60 GHz Band -- 1.4.1 BeamForming -- 1.5 Uniquemm-WaveApplications -- 1.5.1 mm-Wave Spectrum -- 1.5.2 Automotive Radar -- 1.5.3 mm-Wave Imaging forMedicalApplications -- 1.5.4 Collaborative DistributedMIMO -- 1.6 Overview of Book -- References -- CH. 2. Silicon Technologies to Address mm-Wave Solutions -- 2.1 Why Silicon? -- 2.1.1 Performance -- 2.1.2 Cost, Integration [3] -- 2.1.3 ManufacturingCapacity -- 2.2 Modern SiGe and CMOS Technology -- 2.2.1 Lithography -- 2.2.2 Low-K Dielectrics and CopperWiring -- 2.2.3 Mobility and Strain Engineering -- 2.2.4 Metal Gates &High-K Dielectrics -- 2.3 Active Devices on Recent Bulk and SOI Technologies -- 2.3.1 Bipolar Devices -- 2.3.2 CMOS devices -- 2.3.3 SOI CMOS devices -- 2.3.4 Current Density Scaling for CMOS and Bipolar Devices -- 2.3.5 Comparison Between State-of-the-Art HBT and CMOS Devices -- 2.4 Impact of the Back-End of Line onmm-WaveDesign -- 2.5 Conclusion -- 2.6 Acknowledgements: -- References -- CH. 3. Design and Modeling of Active and Passive Devices -- 3.1 Passive Devices -- 3.1.1 Transmission Lines -- 3.1.2 Inductors -- 3.1.3 Capacitors -- 3.1.4 Transformers -- 3.1.5 Resonators -- 3.2 Active Devices -- 3.2.1 Modeling -- 3.2.2 Active Device Design -- 3.2.3 Small-SignalModel -- 3.2.4 Large-SignalModel -- 3.2.5 FET NoiseModel -- 3.3 Conclusion -- References -- CH. 4. Amplifiers and Mixers -- 4.1 60GHz Low-NoiseAmpli.ers:What's Different? -- 4.1.1 Transistors Closer to Cutoff -- 4.1.2 SmallWavelengths -- 4.1.3 Parasitics at 60 GHz -- 4.2 Low-NoiseAmplifier Design Methodology -- 4.2.1 Input Match Optimization for Noise and Power -- 4.2.2 Transistor Noise Parameters -- 4.2.3 Common-Base vs. Common-Emitter -- 4.3 Low-NoiseAmpli.er Examples -- 4.3.1 Bipolar LNA (v1), Common-Base Input -- 4.3.2 Bipolar LNA (v2), Common-Emitter Input -- 4.3.3 CMOS Common SourceAmpli.ers -- 4.3.4 CMOS CommonGateAmplifiers -- 4.3.5 Differential PairAmplifiers -- 4.3.6 Multi-Stage Amplifier Design -- 4.3.7 ATwo-Stage 30 GHzAmplifier -- 4.4 Mixers and FrequencyTranslation -- 4.4.1 Single TransistorMixers -- 4.4.2 Dual GateMixers -- 4.4.3 Gilbert CellMixers -- 4.5 Examples of Integrated Front-Ends -- 4.5.1 CMOS 130nm 60 GHz Front-End -- 4.5.2 SiGe Transceiver Chipset -- 4.6 Conclusion -- References -- CH. 5. Voltage-Controlled Oscillators and Frequency Dividers -- 5.1 Considerations ofVCOs -- 5.2 Cross-Coupled Oscillators -- 5.