Mosfet Modeling For Vlsi Simulation

Theory And Practice

By: Narain Arora (Editor)

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Hardcover | 3 March 2007

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634 Pages

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22.7 x 16.0 x 3.7

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A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

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Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Circuits & Components Electronic Devices & Materials Semi-Conductors & Super-Conductors Computing & I.T.Computer Science Energy Technology & Engineering Electrical Engineering Booktopia Publisher Services

World Scientific Publishing

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Paperback

Published: 21st February 2007

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List of Symbols	p. XIX
Acronyms	p. XXIV
Overview	p. 1
Circuit Design with MOSFETs	p. 3
MOSFET Modeling	p. 5
Model Parameter Determination	p. 9
Interconnect Modeling	p. 10
Subjects Covered	p. 11
References	p. 11
Review of Basic Semiconductor and pn Junction Theory	p. 15
Energy Band Model	p. 15
Intrinsic Semiconductor	p. 17
Fermi level	p. 19
Extrinsic or Doped Semiconductor	p. 21
Generation-Recombination	p. 25
Quasi-Fermi Level	p. 27
Electrical Conduction	p. 28
Carrier Mobility	p. 28
Resistivity and Sheet Resistance	p. 33
Transport Equations	p. 36
Continuity Equation	p. 37
Poisson's Equation	p. 38
pn Junction at Equilibrium	p. 39
Built-in Potential	p. 42
Depletion Width	p. 43
Diode Current-Voltage Characteristics	p. 46
Limitation of the Diode Current Model	p. 48
Bulk Resistance	p. 51
Junction Breakdown Voltage	p. 52
Diode Dynamic Behavior	p. 53
Junction Capacitance	p. 53
Diffusion Capacitance	p. 56
Small Signal Conductance	p. 57
Real pn Junction	p. 58
Diode Circuit Model	p. 61
Temperature Dependent Diode Model Parameters	p. 64
Temperature Dependence of I[subscript s]	p. 64
Temperature Dependence of [Phi subscript bi]	p. 66
Temperature Dependence of C[subscript jO]	p. 66
References	p. 67
MOS Transistor Structure and Operation	p. 69
MOSFET Structure	p. 69
MOSFET Characteristics	p. 73
Punchthrough	p. 81
MOSFET Capacitances	p. 82
Small-Signal Behavior	p. 84
Device Speed	p. 86
MOSFET Scaling	p. 87
Hot-Carrier Effects	p. 90
VLSI Device Structures	p. 93
Gate Material	p. 93
Nonuniform Channel Doping	p. 94
Source-Drain Structures	p. 95
Device Isolation	p. 98
CMOS Process	p. 99
MOSFET Parasitic Elements	p. 102
Source-Drain Resistance	p. 102
Source/Drain Junction Capacitance	p. 108
Gate Overlap Capacitances	p. 109
MOSFET Length and Width Definitions	p. 113
Effective or Electrical Channel Length	p. 113
Effective or Electrical Channel Width	p. 114
MOSFET Circuit Models	p. 115
References	p. 118
MOS Capacitor	p. 121
MOS Capacitor with No Applied Voltage	p. 121
Work Function	p. 123
Oxide Charges	p. 127
Flat Band Voltage	p. 131
MOS Capacitor at Non-Zero Bias	p. 133
Accumulation	p. 135
Depletion	p. 135
Inversion	p. 138
Capacitance of MOS Structures	p. 147
Low Frequency C-V Plot	p. 153
High Frequency C-V Plot	p. 154
Deep Depletion C-V Plot	p. 155
Deviation from Ideal C-V Curves	p. 156
Anomalous C-V Curve (Polysilicon Depletion Effect)	p. 159
MOS Capacitor Applications	p. 161
Nonuniformly Doped Substrate and Flat Band Voltage	p. 162
Temperature Dependence of V[subscript fb]	p. 163
References	p. 165
Threshold Voltage	p. 167
MOSFET with Uniformly Doped Substrate	p. 167
Nonuniformly Doped MOSFET	p. 177
Enhancement Type Device	p. 179
Depletion Type Device	p. 190
Threshold Voltage Variations with Device Length and Width	p. 194
Short-Channel Effect	p. 195
Narrow-Width Effect	p. 205
Drain Induced Barrier Lowering (DIBL) Effect	p. 210
Small-Geometry Effect	p. 219
Temperature Dependence of the Threshold voltage	p. 221
References	p. 225
MOSFET DC Model	p. 230
Drain Current Calculations	p. 230
Pao-Sah Model	p. 235
Charge-Sheet Model	p. 238
Piece-Wise Drain Current Model for Enhancement Devices	p. 243
First Order Model	p. 244
Bulk-Charge Model	p. 251
Square-Root Approximation	p. 253
Drain Current Equation with Square-Root Approximation	p. 257
Subthreshold Region Model	p. 259
Limitations of the Model	p. 267
Drain Current Model for Depletion Devices	p. 270
Effective Mobility	p. 276
Mobility Degradation Due to the Gate Voltage	p. 277
Mobility Degradation Due to the Drain Voltage	p. 284
Short-Geometry Models	p. 287
Linear Region Model	p. 289
Saturation Voltage	p. 291
Saturation Region-Channel Length Modulation	p. 295
Subthreshold Model	p. 305
Continuous Model	p. 307
Impact of Source-Drain Resistance on Drain Current	p. 310
Temperature Dependence of the Drain Current	p. 313
Temperature Dependence of Mobility	p. 314
References	p. 318
Dynamic Model	p. 325
Intrinsic Charges and Capacitances	p. 325
Meyer Model	p. 328
Drawbacks of the Meyer Model	p. 334
Charge-Based Capacitance Model	p. 337
Long-Channel Charge Model	p. 340
Capacitances	p. 347
Short-Channel Charge Model	p. 352
Capacitances	p. 356
Limitations of the Quasi-Static Model	p. 359
Small-Signal Model Parameters	p. 360
References	p. 364
Modeling Hot-Carrier Effects	p. 366
Substrate Current Model	p. 367
Gate Current Model	p. 374
Correlation of Gate and Substrate Current	p. 382
Mechanism of MOSFET Degradation	p. 383
Measure of Degradation-Device Lifetime	p. 388
Impact of Degradation on Circuit Performance	p. 394
Temperature Dependence of Device Degradation	p. 396
References	p. 398
Data Acquisition and Model Parameter Measurements	p. 402
Data Acquisition	p. 403
Data for DC Models	p. 410
Data for AC Models	p. 414
MOS Capacitor C-V Measurement	p. 418
Gate-Oxide Capacitance Measurement	p. 421
Optical Method-Ellipsometry	p. 421
Electrical Method	p. 422
Measurement of Doping Profile in Silicon	p. 427
Capacitance-Voltage Method	p. 428
DC Method	p. 436
Measurement of Threshold Voltage	p. 438
Determination of Body Factor y	p. 443
Flat Band Voltage	p. 445
Drain Induced Barrier Lowering (DIBL) Parameter	p. 445
Determination of Subthreshold Slope	p. 447
Carrier Inversion Layer Mobility Measurement	p. 448
Split-CV Method	p. 452
Determination of Effective Channel Length and Width	p. 457
Drain Current Methods of Determination [Delta]L	p. 458
Capacitance Method of Determining [Delta]L	p. 468
Methods of Determining [Delta]W	p. 470
Determination of Drain Saturation Voltage	p. 472
Measurement of MOSFET Intrinsic Capacitances	p. 477
On-Chip Methods	p. 477
Off-Chip Methods	p. 481
Measurement of Gate Overlap Capacitance	p. 484
Measurement of MOSFET Source/Drain Diode Junction Parameters	p. 489
Diode Saturation or Reverse Current I[subscript s]	p. 489
Junction Capacitance	p. 493
References	p. 494
Model Parameter Extraction Using Optimization Method	p. 501
Model Parameter Extraction	p. 501
Basics Definitions in Optimization	p. 504
Optimization Methods	p. 510
Constrained Optimization	p. 515
Multiple Response Optimization	p. 518
Some Remarks on Parameter Extraction Using Optimization Technique	p. 521
Confidence Limits on Estimated Model Parameter	p. 522
Examples of Redundant Parameters	p. 527
Parameter Extraction Using Optimizer	p. 531
Drain Current Model Parameter Extraction	p. 532
MOSFET AC Model Parameter Extraction	p. 533
References	p. 534
SPICE Diode and MOSFET Models and Their Parameters	p. 536
Diode Model	p. 536
MOSFET Level 1 Model	p. 542
DC Model	p. 542
Capacitance Model	p. 543
MOSFET Level 2 Model	p. 548
DC Model	p. 548
Capacitance Model	p. 552
MOSFET Level 3 Model	p. 554
DC Model	p. 554
MOSFET Level 4 Model	p. 556
DC Model	p. 556
Capacitance Model	p. 559
Comparison of the Four MOSFET Models	p. 559
References	p. 561
Statistical Modeling and Worst-Case Design Parameters	p. 563
Methods of Generating Worst Case Parameters	p. 564
Model Parameter Sensitivity	p. 566
Principal Factor Method	p. 567
Statistical Analysis with Parameter Correlation	p. 569
Principal Component Analysis	p. 571
Factor Analysis	p. 572
Factor Rotation	p. 574
Regression Models	p. 574
Optimization Method	p. 575
References	p. 578
Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300 K	p. 580
Some Important Physical Constants at 300 K	p. 581
Unit Conversion Factors	p. 581
Magnitude Prefixes	p. 581
Methods of Calculating [Phi subscript s] from the Implicit Eq. (6.23) or (6.30)
Charge Based MOSFET Intrinsic Capacitances	p. 583
Linear Regression	p. 587
Basic Statistical and Probability Theory	p. 588
List of Widely Used Statistical Package Programs	p. 599
Subject Index	p. 600
Table of Contents provided by Ingram. All Rights Reserved.

Mosfet Modeling For Vlsi Simulation

Theory And Practice

At a Glance

Hardcover

Shipping

How to return your order

Defective items

You Can Find This Book In

Other Editions and Formats

Paperback

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