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MOSFET Theory and Design

By: R. M. Warner, B. L. Grung

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Paperback | 5 September 2000

At a Glance

Paperback
272 Pages

Dimensions(cm)
15.2 x 23.1 x 1.5

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$174.13

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Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter.
Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models.
MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.

Industry Reviews

"This text could support a first undergraduate course in physical electronics that begins with MOSFETs even before students start electromagnetics. Dielectric constant is demystified with atomic pictorials in an Appendix. Alternatively, students previously introduced to semiconductor physics can appreciate the graduated descent into finer levels of MOSFET modeling and the last chapter, MOSFET-BJT Performance Comparisons."--Arthur Uhlir, Tufts University

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