Nitride Wide Bandgap Semiconductor Material and Electronic Devices - Yue Hao

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

By: Yue Hao, Jin Feng Zhang, Jin Cheng Zhang

Paperback | 30 June 2020

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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