Optical Properties of Low Dimensional Silicon Structures

By: B. Bensahel (Editor), Leigh T. Canham (Editor), Stefano Ossicini (Editor)

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Hardcover | 31 August 1993

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256 Pages

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23.39 x 15.6 x 1.6

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The workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.

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Preface
Microporous silicon: formation mechanism and preparation method
Electrochemical and chemical behaviour of porous silicon layers: the role of the material wettability and its high specific surface area
Fabrication of Si nanostructures for light emission study
Light emission from porous silicon and other self-organised low dimensional systems
Preparation and properties of thin siloxene films on silicon
Modelling of porous structures formation during electrochemical treatment of materials
Electronic charge trapping effects in porous silicon
Mechanical, optical and electrical properties of porous silicon prepared under clean conditions
The influence of microelectronic processing steps on the properties of porous silicon layers
Progress towards understanding and exploiting the luminescent properties of highly porous silicon
`White' photoluminescence from electrochemically attacked silicon
Electrochemical investigation of the electroluminescent properties of porous silicon
Phenomenological properties of the fast (blue) and slow (red) components in the photoluminescence of porous silicon
Electroluminescence from porous silicon
Optoelectronic properties of porous silicon
Voltage-tunable electroluminescence of porous silicon
Studies of porous silicon by electron microscopy
Scanning probe microscopies of luminescent porous silicon layers
In-situ combined infrared and photoluminescence investigation of porous silicon during its etching
Near surface states in Si and their possible role in the luminescence of porous silicon
Porous electroluminescence mechanisms and defect analysis
Defect and structure analysis of n+ and p+-type porous silicon by the Electron Paramagnetic Resonance technique
Photoluminescence and optically detected magnetic resonance investigations on porous silicon
Effects of the reduction of dielectric constant in nanoscale silicon
Quantum effects in porous silicon
Electronic properties of low dimensional silicon structures
Role of silicon molecules and crystallites in the luminescence of porous silicon
Localisation of excitons on a quantum wire of fluctuating width
Index
Table of Contents provided by Publisher. All Rights Reserved.

Optical Properties of Low Dimensional Silicon Structures

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