Photo-Excited Charge Collection Spectroscopy

Probing the traps in field-effect transistors

By: Seongil Im, Youn-Gyoung Chang, Jae Hoon Kim

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Paperback | 7 May 2013

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116 Pages

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23.39 x 15.6 x 0.61

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Chapter 1. Device Stability and Photo-Excited Charge-Collection Spectroscopy.
1.1. Thin-film transistor architectures for photon probe measurements.
1.2. Device physics and equations for thin-film transistors.
1.3. Stability issues: Hysteresis by Gate Voltage Sweep.
1.4. Stability issues: Bias-Temperature-Stress.
1.5. Stability issues: Photostability.
1.6. Stability issues: Back Channel Current.
1.7. Importance of dielectric/channel interface trap states.
1.8. Previous Interface Trap measurements.
1.9. Photo-Excited Charge-Collection Spectroscopy (PECCS).
1.10. Chapter summary.
Reference.

Chapter 2. Instrumentations for PECCS.
2.1. Introduction of PECCS measurements system.
2.2. Optical System for PECCS measurement.
2.3. Electrical measurement.
2.4. Data processing and analysis for DOS profile.
Reference.

Chapter 3. PECCS measurements in Organic FETs.
3.1. PECCS on small molecule-based p-channel FETs.
3.2. PECCS on small molecule-based n-channel FETs.
3.3. PECCS on polymer-based FETs.
3.4. Chapter summary.
Reference.

Chapter 4. PECCS measurements in Oxide FETs.
4.1. PECCS on ZnO based n-channel FETs.
4.2. PECCS on amorphous InGaZnO based n-channel FETs.
4.3. PECCS by Current-Voltage vs. Capacitance-Voltage method on amorphous Si and amorphous InGaZnOTFTs.
4.4. PECCS to observe interface- and bulk-originated trap densities in amorphous InGaZnOTFTs.
4.5. Chapter summary.
Reference.

Chapter 5. PECCS measurements in Nanostructure FETs.
5.1. PECCS on ZnO nanowire-based n-channel FETs.
5.2. PECCS measurements for the thickness-modulated bandgap of MoS2 nanosheets.
5.3. Chapter summary.
Reference

Chapter 6. Summary and limiting factors of PECCS.

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