Physical and Technical Problems of SOI Structures and Devices : Proceedings of the NATO Advanced Research Workshop, Gurzuf, Ukraine, November 1-4, 1994

By: J.-P. Colinge (Editor), Vladimir S. Lysenko (Editor), Alexei N. Nazarov (Editor)

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In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

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Preface
Contributors
Low Dose SIMOX for ULSI Applications	p. 3
Why Porous Silicon for SOI?	p. 15
Defect Engineering in SOI Films Prepared by Zone-Melting Recrystallization	p. 27
Ion Beam Processing for Silicon-on-Insulator	p. 39
Semi-Insulating Oxygen-Doped Silicon by Low Temperature Chemical Vapor Deposition for SOI Applications	p. 55
Direct Formation of Thin Film Nitride Structures by High Intensity Ion Implantation of Nitrogen into Silicon	p. 67
Stimulated Technology for Implanted SOI Formation	p. 73
Behaviour of Oxygen and Nitrogen Atoms Sequentially Implanted into Silicon	p. 79
SOI Fabrication by Silicon Wafer Bonding with the Help of Glass-Layer Fusion	p. 87
Crystallization of a-Si Films on Glasses by Multipulse-Excimer-Laser Technique	p. 93
Microzone Laser Recrystallized Polysilicon Layers on Insulator	p. 101
Electrical Characterization Techniques for Silicon on Insulator Materials and Devices	p. 109
The Defect Structure of Buried Oxide Layers in SIMOX and BESOI Structures	p. 133
IR Study of Buried Layer Structure on Different Stages of Technology	p. 157
Optical Investigation of Silicon Implanted with High Doses of Oxygen and Hydrogen Ions	p. 163
Electrical Properties of ZMR SOI Structures: Characterization Techniques and Experimental Results	p. 169
Fabrication and Characterisation of Poly-Si TFTs on Glass	p. 183
Hot Carrier Reliability of SOI Structures	p. 199
Novel TESC Bipolar Transistor Approach for a Thin-Film Silicon-on-Insulator Substrate	p. 211
Problems of Radiation Hardness of SOI Structures and Devices	p. 217
Fabrication of SIMOX Structures and IC's Test Elements	p. 241
Low-Frequency Noise Characterization of Silicon-on-Insulator Depletion-mode p-MOSFETS	p. 247
SOI Devices and Circuits: An Overview of Potentials and Problems	p. 255
1.2 [mu]m CMOS/SOI on Porous Silicon	p. 275
SOI Pressure Sensors Based on Laser Recrystallized Polysilicon	p. 281
Index	p. 287
Table of Contents provided by Blackwell. All Rights Reserved.

Physical and Technical Problems of SOI Structures and Devices : Proceedings of the NATO Advanced Research Workshop, Gurzuf, Ukraine, November 1-4, 1994

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