| Preface | p. xi |
| Energy Band Theory | p. 1 |
| Electron in a crystal | p. 1 |
| Two examples of electron behavior | p. 1 |
| Free electron | p. 1 |
| The particle-in-a-box approach | p. 3 |
| Energy bands of a crystal (intuitive approach) | p. 6 |
| Kronig-Penney model | p. 7 |
| Valence band and conduction band | p. 15 |
| Parabolic band approximation | p. 19 |
| Concept of a hole | p. 20 |
| Effective mass of the electron in a crystal | p. 21 |
| Density of states in energy bands | p. 25 |
| Intrinsic semiconductor | p. 29 |
| Extrinsic semiconductor | p. 31 |
| Ionization of impurity atoms | p. 34 |
| Electron-hole equilibrium | p. 35 |
| Calculation of the Fermi Level | p. 37 |
| Degenerate semiconductor | p. 39 |
| Alignment of Fermi levels | p. 40 |
| Important Equations | p. 43 |
| Problems | p. 44 |
| Theory of Electrical Conduction | p. 51 |
| Drift of electrons in an electric field | p. 51 |
| Mobility | p. 53 |
| Drift current | p. 56 |
| Hall effect | p. 57 |
| Diffusion current | p. 59 |
| Drift-diffusion equations | p. 60 |
| Einstein relationships | p. 60 |
| Transport equations | p. 62 |
| Quasi-Fermi levels | p. 65 |
| Important Equations | p. 67 |
| Problems | p. 68 |
| Generation/Recombination Phenomena | p. 73 |
| Introduction | p. 73 |
| Direct and indirect transitions | p. 74 |
| Generation/recombination centers | p. 77 |
| Excess carrier lifetime | p. 79 |
| SRH recombination | p. 82 |
| Minority carrier lifetime | p. 86 |
| Surface recombination | p. 87 |
| Important Equations | p. 89 |
| Problems | p. 89 |
| The PN Junction Diode | p. 95 |
| Introduction | p. 95 |
| Unbiased PN junction | p. 97 |
| Biased PN junction | p. 103 |
| Current-voltage characteristics | p. 105 |
| Derivation of the ideal diode model | p. 107 |
| Generation/recombination current | p. 113 |
| Junction breakdown | p. 116 |
| Short-base diode | p. 118 |
| PN junction capacitance | p. 120 |
| Transition capacitance | p. 120 |
| Diffusion capacitance | p. 121 |
| Charge storage and switching time | p. 123 |
| Models for the PN junction | p. 125 |
| Quasi-static, large-signal model | p. 126 |
| Small-signal, low-frequency model | p. 126 |
| Small-signal, high-frequency model | p. 128 |
| Solar cell | p. 128 |
| PiN diode | p. 132 |
| Important Equations | p. 133 |
| Problems | p. 133 |
| Metal-semiconductor contacts | p. 139 |
| Schottky diode | p. 139 |
| Energy band diagram | p. 139 |
| Extension of the depletion region | p. 142 |
| Schottky effect | p. 143 |
| Current-voltage characteristics | p. 145 |
| Influence of interface states | p. 146 |
| Comparison with the PN junction | p. 147 |
| Ohmic contact | p. 149 |
| Important Equations | p. 150 |
| Problems | p. 151 |
| JFET and MESFET | p. 153 |
| The JFET | p. 153 |
| The MESFET | p. 159 |
| Important Equations | p. 163 |
| The MOS Transistor | p. 165 |
| Introduction and basic principles | p. 165 |
| The MOS capacitor | p. 170 |
| Accumulation | p. 170 |
| Depletion | p. 176 |
| Inversion | p. 178 |
| Threshold voltage | p. 183 |
| Ideal threshold voltage | p. 183 |
| Flat-band voltage | p. 184 |
| Threshold voltage | p. 187 |
| Current in the MOS transistor | p. 187 |
| Influence of substrate bias on threshold voltage | p. 192 |
| Simplified model | p. 194 |
| Surface mobility | p. 196 |
| Carrier velocity saturation | p. 199 |
| Subthreshold current - Subthreshold slope | p. 201 |
| Continuous model | p. 206 |
| Channel length modulation | p. 208 |
| Numerical modeling of the MOS transistor | p. 210 |
| Short-channel effect | p. 213 |
| Hot-carrier degradation | p. 216 |
| Scaling rules | p. 216 |
| Hot electrons | p. 218 |
| Substrate current | p. 218 |
| Gate current | p. 219 |
| Degradation mechanism | p. 220 |
| Terminal capacitances | p. 221 |
| Particular MOSFET structures | p. 224 |
| Non-Volatile Memory MOSFETs | p. 224 |
| SOI MOSFETs | p. 228 |
| Advanced MOSFET concepts | p. 230 |
| Polysilicon depletion | p. 230 |
| High-k dielectrics | p. 231 |
| Drain-induced barrier lowering (DIBL) | p. 231 |
| Gate-induced drain leakage (GIDL) | p. 232 |
| Reverse short-channel effect | p. 233 |
| Quantization effects in the inversion channel | p. 234 |
| Important Equations | p. 235 |
| Problems | p. 236 |
| The Bipolar Transistor | p. 251 |
| Introduction and basic principles | p. 251 |
| Long-base device | p. 252 |
| Short-base device | p. 253 |
| Fabrication process | p. 256 |
| Amplification using a bipolar transistor | p. 258 |
| Ebers-Moll model | p. 259 |
| Emitter efficiency | p. 268 |
| Transport factor in the base | p. 269 |
| Regimes of operation | p. 272 |
| Transport model | p. 273 |
| Gummel-Poon model | p. 275 |
| Current gain | p. 280 |
| Recombination in the base | p. 280 |
| Emitter efficiency and current gain | p. 282 |
| Early effect | p. 286 |
| Dependence of current gain on collector current | p. 290 |
| Recombination at the emitter-base junction | p. 290 |
| Kirk effect | p. 292 |
| Base resistance | p. 295 |
| Numerical simulation of the bipolar transistor | p. 295 |
| Collector junction breakdown | p. 298 |
| Common-base configuration | p. 298 |
| Common-emitter configuration | p. 299 |
| Charge-control model | p. 300 |
| Forward active mode | p. 301 |
| Large-signal model | p. 306 |
| Small-signal model | p. 307 |
| Important Equations | p. 309 |
| Problems | p. 309 |
| Heterojunction Devices | p. 315 |
| Concept of a heterojunction | p. 315 |
| Energy band diagram | p. 316 |
| Heterojunction bipolar transistor (HBT) | p. 320 |
| High electron mobility transistor (HEMT) | p. 321 |
| Photonic Devices | p. 324 |
| Light-emitting diode (LED) | p. 324 |
| Laser diode | p. 326 |
| Problems | p. 330 |
| Quantum-Effect Devices | p. 331 |
| Tunnel Diode | p. 331 |
| Tunnel effect | p. 331 |
| Tunnel diode | p. 333 |
| Low-dimensional devices | p. 336 |
| Energy bands | p. 337 |
| Density of states | p. 343 |
| Conductance of a 1D semiconductor sample | p. 348 |
| 2D and 1D MOS transistors | p. 350 |
| Single-electron transistor | p. 353 |
| Tunnel junction | p. 353 |
| Double tunnel junction | p. 355 |
| Single-electron transistor | p. 358 |
| Problems | p. 361 |
| Semiconductor Processing | p. 363 |
| Semiconductor materials | p. 363 |
| Silicon crystal growth and refining | p. 364 |
| Doping techniques | p. 367 |
| Ion implantation | p. 367 |
| Doping impurity diffusion | p. 370 |
| Gas-phase diffusion | p. 373 |
| Oxidation | p. 374 |
| Chemical vapor deposition (CVD) | p. 381 |
| Silicon deposition and epitaxy | p. 381 |
| Dielectric layer deposition | p. 382 |
| Photolithography | p. 384 |
| Etching | p. 388 |
| Metallization | p. 391 |
| Metal deposition | p. 391 |
| Metal silicides | p. 392 |
| CMOS process | p. 393 |
| NPN bipolar process | p. 399 |
| Problems | p. 405 |
| Annex | p. 409 |
| Physical Quantities and Units | p. 409 |
| Physical Constants | p. 410 |
| Concepts of Quantum Mechanics | p. 411 |
| Crystallography - Reciprocal Space | p. 414 |
| Getting Started with Matlab | p. 418 |
| Greek alphabet | p. 426 |
| Basic Differential Equations | p. 427 |
| Index | p. 431 |
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