Introduction | p. 1 |
Overview of the Book | p. 1 |
Development of Amorphous Silicon | p. 2 |
Basic Properties of Amorphous Silicon | p. 3 |
References | p. 5 |
Active-Matrix Liquid-Crystal Displays | p. 7 |
Introduction | p. 7 |
TFT LCD | p. 9 |
TFT LCD Configuration | p. 9 |
Pixel Design | p. 14 |
Design Analysis | p. 17 |
Scaling Theory of TFT LCD | p. 26 |
Fabrication of TFT Panels | p. 34 |
Thin-Film Transistors | p. 36 |
Hydrogenated Amorphous Silicon Thin-Film Transistors | p. 39 |
TFT Characteristics | p. 41 |
Threshold Voltage Shift | p. 49 |
Simulation of TFT Behavior | p. 53 |
Two-Terminal Devices | p. 60 |
Liquid Crystal | p. 61 |
Physical Constants of Liquid Crystal | p. 64 |
Twisted Nematic Cell | p. 69 |
In-Plane-Switching Cell | p. 81 |
Super-Twisted Nematic (STN) Cell | p. 87 |
References | p. 89 |
Laser Crystallization for Polycrystalline Silicon Device Applications | p. 94 |
Introduction | p. 94 |
Laser Processing of Polysilicon | p. 96 |
Polysilicon | p. 96 |
Laser Crystallization | p. 101 |
Grain Growth | p. 105 |
Surface Roughening | p. 110 |
Laser Doping | p. 111 |
Low-Temperature Poly-Si Devices | p. 11 |
Device Fabrication | p. 118 |
CMOS Device Performance | p. 121 |
Device Leakage Currents | p. 126 |
Device Stability | p. 130 |
Integration of a-Si and Poly-Si TFTs | p. 132 |
Development of Hybrid a-Si and Poly-Si Devices | p. 133 |
Hybrid Materials Processing | p. 135 |
Device Fabrication and Performance | p. 138 |
Conclusion | p. 142 |
References | p. 143 |
Large Area Image Sensor Arrays | p. 147 |
Introduction | p. 147 |
Devices | p. 148 |
P-i-n Photodiodes | p. 148 |
Thin Film Transistors | p. 157 |
Sensor Array Designs | p. 160 |
Matrix Addressed Readout | p. 161 |
TFT Addressed, p-i-n Photodiode Arrays | p. 161 |
High Fill Factor Array Designs | p. 171 |
TFT Addressed, X-Ray Photoconductor Arrays | p. 172 |
Diode Addressed Arrays | p. 175 |
CMOS Sensors | p. 178 |
Imaging Systems and Their Performance | p. 178 |
Electronics | p. 179 |
Electronic Noise | p. 185 |
X-Ray Detection | p. 191 |
The Performance of X-Ray Detectors | p. 194 |
Applications of Large Area Image Sensors | p. 204 |
Medical X-Ray Imaging | p. 204 |
Other Radiation Imaging Applications | p. 211 |
Document Scanning | p. 214 |
Future Developments | p. 216 |
References | p. 217 |
Novel Processing Technology for Macroelectronics | p. 222 |
Introduction | p. 222 |
Resolution and Registration: The Density of Functions Achievable by Printing | p. 225 |
Printed Toner Masks for Etching and Liftoff | p. 228 |
Toner Masks via Paper Transfer: TFTs on Glass Foil | p. 228 |
All Masks Printed Directly: TFTs on Steel Foil | p. 230 |
Printing Active Materials: Jetting Doped Polymers for Organic Light Emitting Devices | p. 232 |
Substrates and Encapsulation for Macroelectronic Circuits | p. 236 |
Plastic Substrate Foil: TFT on Polyimide | p. 244 |
3-D Integration on a Foil Substrate: OLED/TFT Pixel Elements on Steel | p. 246 |
Outlook | p. 249 |
References | p. 250 |
Multijunction Solar Cells and Modules | p. 252 |
Introduction | p. 252 |
Deposition Methods | p. 254 |
Glow-Discharge Deposition Technique | p. 254 |
Plasma Chemistry and the Growth Process | p. 254 |
Factors that Influence Film and Cell Quality | p. 256 |
Single-Junction Cells | p. 258 |
Cell Structure | p. 258 |
Cell Characteristics | p. 259 |
Numerical Modeling | p. 261 |
Light-Induced Degradation | p. 264 |
High Efficiency Cells | p. 268 |
Introduction | p. 268 |
Multijunction Cell | p. 269 |
Key Requirements for Obtaining High Efficiency | p. 270 |
Back Reflector | p. 270 |
Doped Layer | p. 275 |
Intrinsic Layers | p. 277 |
Optimization of the Component Cells and Current Matching | p. 281 |
Tunnel Junction | p. 282 |
Top Conducting Oxide | p. 285 |
Cell and Module Performance | p. 285 |
Manufacturing Technology | p. 287 |
Manufacturing Process | p. 287 |
Production Status and Product Advantage | p. 293 |
Alternative Technologies and Future Trends | p. 295 |
References | p. 299 |
Multilayer Color Detectors | p. 306 |
Introduction | p. 306 |
Applications of a-Si:H Color Sensors | p. 307 |
Optical Properties of Amorphous Silicon | p. 308 |
Optical Properties of Amorphous Silicon Alloys | p. 310 |
Optical Design of Layered a-Si:H Structures | p. 312 |
Two-Color Sensors | p. 315 |
Steady State and Transient Operation | p. 317 |
SPICE Model of the Two Color Detector | p. 319 |
Three Color Sensors | p. 320 |
Three Color Discrimination with Two Electrical Terminals | p. 320 |
Adjustable Threshold Three Color Detector (ATCD) | p. 323 |
Three Color Detectors in the Time Integration Regime | p. 327 |
Mechanism of Autopolarization of the Stacked Cells | p. 328 |
a-Si:H Based UV Sensors | p. 332 |
Structure and Operation of the UV Detector | p. 333 |
a-Si:H Based IR Sensors | p. 334 |
IR Detection by Differential Photo-Capacitance | p. 336 |
References | p. 338 |
Thin Film Position Sensitive Detectors: From 1D to 3D Applications | p. 342 |
Introduction and Historical Background | p. 342 |
Why Use Amorphous Silicon to Produce Position Sensitive Detectors? | p. 343 |
Principles of Operation of 1D and 2D PSD | p. 346 |
The Different Types of PSD Devices That Can Be Produced | p. 348 |
Different Types of a-Si:H TFPSD and the Production Processes Used | p. 349 |
Physical Model for the Lateral Photo-effect in a-Si:H p-i-n 1D and 2D TFPSD | p. 358 |
Introduction | p. 358 |
General Description of the 1D Theoretical Model | p. 359 |
Role of the Recombination Losses for the Fall-Off Parameter | p. 362 |
Static Behaviour of Ey and ¿y | p. 364 |
Role of ¿s and ¿sd for the Device Detection Limits, Linearity, and Spatial Resolution | p. 365 |
Static Distribution of the Lateral Current | p. 365 |
Extension of the Theoretical 1D Model to the 2D Case | p. 367 |
Determination of the Transient Response Time of the TFPSD | p. 368 |
Static and Dynamic Detection Limits | p. 371 |
Static Detection Limits of 1D TFPSD | p. 371 |
Linearity and Spatial Resolution of 1D TFPSD | p. 372 |
Position Response to Multiple Light Beams | p. 374 |
Static Predicted and Experimental Performance of the 2D TFPSD Device | p. 376 |
Dynamic Performance of the 1D and 2D TFPSD | p. 376 |
Response Time of the TFPSD | p. 379 |
Detection of Light Signals with Different Wavelengths | p. 381 |
Characteristics of the a-Si:H p-i-n Structures Used to Produce the TFPSD | p. 383 |
J-V Curves | p. 383 |
Dependence of the Saturation Current of the Device on T | p. 385 |
Spectral Response and Detectivity | p. 386 |
Peripherals for 1D and 2D TFPSD Signal Processing | p. 387 |
Optical Methods | p. 387 |
Peripherals for Signal Processing | p. 389 |
Simulated and Experimental Data in 2D Optical Inspection Systems with TFPSD Detector | p. 392 |
Linear Array of Thin Film Position Sensitive Detector (LTFPSD) | p. 393 |
Principles of the Optical Methods Used | p. 394 |
Positional Resolution of the Array | p. 395 |
Hardware to Control Arrays of Multiple 1D Sensors | p. 396 |
Bandwidth Requirements for the Preamplifiers Used in the Hardware Control Unit of the LTFPSD | p. 398 |
Summary and Future Outlook | p. 399 |
References | p. 400 |
Symbols and Abbreviations | p. 404 |
Subject Index | p. 411 |
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