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Emerging Resistive Switching Memories : SpringerBriefs in Materials - Jianyong Ouyang

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Emerging Resistive Switching Memories

By: Jianyong Ouyang

eText | 4 July 2016

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This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

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You Can Find This eBook In

Non-FictionEngineering & TechnologyTechnology in GeneralNanotechnologyElectronics & Communications EngineeringElectronics EngineeringCircuits & ComponentsComputing & I.T.Computer HardwareStorage Media & Peripherals

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