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Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties - Hamid Bentarzi

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Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties

By: Hamid Bentarzi

eText | 12 January 2011

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This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

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You Can Find This eBook In

Non-FictionSciencePhysicsElectricityEngineering & TechnologyElectronics & Communications EngineeringElectronics EngineeringElectronic Devices & MaterialsSemi-Conductors & Super-ConductorsTechnology in GeneralEngineering in GeneralMechanical Engineering & Materials
Materials ScienceTesting of MaterialsChemistryAnalytical ChemistrySpectrum AnalysisMaterials & States of MatterCondensed Matter Physics including Liquid State & Solid State Physics

Other Editions and Formats

Paperback

Published: 25th February 2013

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